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【IXFT52N30Q】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single




MOSFET N-CH 300V 52A TO-268





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5300pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

360W (Tc)

Rds On (Max) @ Id, Vgs:

60 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:

TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

Search For IXFT52N30Q - IXFT52N30Q Product Information : 

Electronic Components Industry Services, Resistors, Inductors
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Part Number Part Number Brand D/C Desc Qty Country /


IXFT52N30Q  IXYS 13+TO-268/D3PAK 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member


IXFT52N30Q  IXYS 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member


IXFT52N30Q  IXYS 17+LTB-IC 3200China
Dopoint Hi-Tech Limited E-Catalog 13th Year Member


IXFT52N30Q  IXYS 2013+TO-268 5000China
G Trader Limited E-Catalog 8th Year Member


IXFT52N30Q  IXYS 03+ 87China
Air Race Electronics Co.,Limited E-Catalog 9th Year Member

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