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【IXFT58N20】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXFT58N20

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 200V 58A TO-268

Series:

HiPerFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

220nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4400pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Rds On (Max) @ Id, Vgs:

40 mOhm @ 29A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268

Package / Case:

TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

Search For IXFT58N20 - IXFT58N20 Product Information : 

Acoustic Components, Optoelectronic Components, Capacitors
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IXFT58N20

IXFT58N20  IXYS 16200Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IXFT58N20

IXFT58N20  IXYS 13+TO-268/D3PAK 13800Hong Kong
A & C Int'l Electronics Co. E-Catalog 10th Year Member

IXFT58N20

IXFT58N20  IXYS 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXFT58N20

IXFT58N20  IXYS 1MOS: 44A600V 146China
Yaspro Electronics (Shanghai) Co., Ltd E-Catalog 2nd Year Member

IXFT58N20Q

IXFT58N20Q  IXYS 10+TO-247 636China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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