【IXTH16N20D2 Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXTH16N20D2

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 200V 16A TO-247

Series:

-

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

208nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

5500pF @ 25V

Vgs (Max):

±20V

FET Feature:

Depletion Mode

Power Dissipation (Max):

695W (Tc)

Rds On (Max) @ Id, Vgs:

73 mOhm @ 8A, 0V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 (IXTH)

Package / Case:

TO-247-3

1 - 5 of 5 Record(s)
IXTH16N20D2
 Part NumberBrandD/CQtyCompany

IXTH16N20D2

6861Hong Kong In Fortune Electronics Co., Limited    13

IXTH16N20D2

IXYS18000MY Group (Asia) Limited    13

IXTH16N20D2

IXYS15000HongKong Wanghua Technology Limited   4

IXTH16N20D2

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

IXTH16N20D2

IXYS15+6861Ec Mart (HK) Limited  1

Related Part Number

IXTH16N50D2 | IXTH180N085T | IXTH152N085T | IXTH15N50L2 | IXTH160N075T | IXTH160N10T | IXTH160N15T | IXTH16N10D2 | IXTH16N50D2 | IXTH180N085T | IXTH180N10T
IXTH16N20D2 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIOIG]
[HGReferer_OurService]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTH16N20D2 Related Keywords in 2018 USA

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