【IXTH6N150 Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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The following offer records may have been changed. To search for latest offer, please click Get Latest Offer
Part Number:

IXTH6N150

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 1500V 6A TO-247

Series:

-

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1500V (1.5kV)

Current - Continuous Drain (Id) @ 25°C:

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

67nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2230pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

540W (Tc)

Rds On (Max) @ Id, Vgs:

3.5 Ohm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 (IXTH)

Package / Case:

TO-247-3

1 - 5 of 5 Record(s)
IXTH6N150
 Part NumberBrandD/CQtyCompany

IXTH6N150

IXYS2015+2000Bonase Electronics (HK) Co., Limited    13

IXTH6N150

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

IXTH6N150

IXYS14+5555Foston Technology Co., Limited  1

IXTH6N150

IXYS POWER17+500North Star Technology (HK) Co.,Ltd  1

IXTH6N90

IXYS1999+5000Bonase Electronics (HK) Co., Limited    13

Related Part Number

IXTH6N50D2 | IXTH6N80A | IXTH60N15 | IXTH60N20L2 | IXTH62N65X2 | IXTH64N10L2 | IXTH64N65X | IXTH67N10 | IXTH6N120 | IXTH6N50D2 | IXTH6N80A
IXTH6N150 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZIE]
[HGReferer_OnlineAd]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTH6N150 Related Keywords in 2018 USA

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