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【IXTK110N30 Transistors - FETs, MOSFETs - Single IXYS】【26V32】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXTK110N30

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 300V 110A TO-264

Series:

MegaMOS

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

300V

Current - Continuous Drain (Id) @ 25°C:

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

390nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

7800pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

730W (Tc)

Rds On (Max) @ Id, Vgs:

26 mOhm @ 500mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-264 (IXTK)

Package / Case:

TO-264-3, TO-264AA

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

IXTK110N30

IXTK110N30 IXYS2016+1000China
MY Group (Asia) Limited  13

IXTK110N30

IXTK110N30 IXYS200Hong Kong
Digchip Technology Co.,Limited  3

IXTK110N20L2

IXTK110N20L2 IXYS2016+18000China
MY Group (Asia) Limited  13
Warranty

26V32

26V32 TI09+340China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

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26V32 | 12061A101KAT2A | IXTK120N20P | IDT2305A1DCG | 115IBEAA | IXTK132N15 | 0603YC823KAT2A | 115K | IXTK140N20 | 021W6L102K
 [hkinbatch20171020]
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 [HKIN20180420PDSTYLE]
 [HKIN20171020MDPartDetails]

IXTK110N30 related keywords in 2018 United States


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