【IXTP110N055T2 Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXTP110N055T2

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 55V 110A TO-220

Series:

TrenchT2

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

57nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3060pF @ 25V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

180W (Tc)

Rds On (Max) @ Id, Vgs:

6.6 mOhm @ 25A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
IXTP110N055T2
 Part NumberBrandD/CQtyCompany
Warranty

IXTP110N055T2

IXYS3638Belt (HK) Electronics Co    12
Warranty

IXTP110N055T2

3638Nosin (HK) Electronics Co.    13

IXTP110N055T2

IXYS18000MY Group (Asia) Limited    13

IXTP110N055T2

IXYS16243HongKong Wanghua Technology Limited   4

IXTP110N055T2

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

Related Part Number

IXTP120N04T2 | IXTP120N075T2 | IXTP100N04T2 | IXTP102N15T | IXTP10N60P | IXTP10N60PM | IXTP10P50P | IXTP110N055P | IXTP110N055T | IXTP120N04T2 | IXTP120N075T2
IXTP110N055T2 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIOIT]
[HGReferer_OnlineAd]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTP110N055T2 Related Keywords in 2018 USA

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