【IXTP12N50P Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXTP12N50P

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 500V 12A TO-220

Series:

Polar

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1830pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

200W (Tc)

Rds On (Max) @ Id, Vgs:

500 mOhm @ 6A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
IXTP12N50P
 Part NumberBrandD/CQtyCompany

IXTP12N50P

IXYS1000MY Group (Asia) Limited    13
Warranty

IXTP12N50P

IXYS13+13800A & C Int'l Electronics Co.    11

IXTP12N50P

IXYS16244HongKong Wanghua Technology Limited   4

IXTP12N50P

IXYS30300MASSTOCK ELECTRONICS LIMITED    1

IXTP12N50P

isc, iscsemi2018+5000Inchange Semiconductor Company Limited   2

Related Part Number

IXTP12N50PM | IXTP12N65X2 | IXTP120P065T | IXTP12N50PM | IXTP12N65X2 | IXTP130N065T2 | IXTP130N10T | IXTP140N055T2 | IXTP140P05T | IXTP14N60P | IXTP14N60PM
IXTP12N50P Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBOPIP]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTP12N50P Related Keywords in 2018 USA

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