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【IXTP160N10T】【Transistors - FETs, MOSFETs - Single】【IXYS】【ISC】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXTP160N10T

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 100V 160A TO-220

Series:

TrenchMV

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

132nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

6600pF @ 25V

Vgs (Max):

±30V

FET Feature:

-

Power Dissipation (Max):

430W (Tc)

Rds On (Max) @ Id, Vgs:

7 mOhm @ 25A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

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1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IXTP160N10T

IXTP160N10T  IXYS 2016+ 14000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXTP160N10T

IXTP160N10T  IXYS 10+TO-220 2034China
Easy Way Electronics ( HK) Co,Ltd E-Catalog 2nd Year Member

IXTP160N10T

IXTP160N10T  isc, iscsemi 2018+TO-220 1KChina
Inchange Semiconductor Company Limited E-Catalog 2nd Year Member

IXTP160N10T

IXTP160N10T  IXYS 14+TO220 1800China
Plus1 Electronic Limited 2nd Year Member

IXTP160N04T2

IXTP160N04T2  IXYS 2016+TO-220 36800China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 13th Year Member

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