【IXTP2N80P Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

IXTP2N80P

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 800V 2A TO-220

Series:

PolarHV

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800V

Current - Continuous Drain (Id) @ 25°C:

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

10.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

440pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

70W (Tc)

Rds On (Max) @ Id, Vgs:

6 Ohm @ 1A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
IXTP2N80P
 Part NumberBrandD/CQtyCompany

IXTP2N80P

IXYS1000MY Group (Asia) Limited   14
Warranty

IXTP2N80P

IXYS13+13800A & C Int'l Electronics Co.    11

IXTP2N80P

IXYS POWER17+500North Star Technology (HK) Co.,Ltd  1

IXTP2N100

IXYS00+4521Xinye International Technology Limited    9

IXTP2N100

7151Hong Kong In Fortune Electronics Co., Limited    13

Related Part Number

IXTP2R4N50P | IXTP32P20T | IXTP230N075T2 | IXTP24P085T | IXTP26P20P | IXTP28P065T | IXTP2N100 | IXTP2N60P | IXTP2N80 | IXTP2R4N50P | IXTP32P20T
IXTP2N80P Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOIIS]
[HGReferer_SD_Ecatalog]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTP2N80P Related Keywords in 2019 USA

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