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【IXTP3N110】【Transistors - FETs, MOSFETs - Single】【IXYS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IXTP3N110

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET N-CH 1100V 3A TO-220

Series:

-

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1100V (1.1kV)

Current - Continuous Drain (Id) @ 25°C:

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1350pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Rds On (Max) @ Id, Vgs:

4 Ohm @ 1.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Search For IXTP3N110 - IXTP3N110 Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IXTP3N110

IXTP3N110  3591China
Nosin (HK) Electronics Co. E-Catalog 12th Year Member

IXTP3N110

IXTP3N110  IXYS Module 68China
Yaspro Electronics (Shanghai) Co., Ltd E-Catalog 2nd Year Member

IXTP3N110

IXTP3N110  IXYS 00+TO-204 1254China
AM SEMI-TECH CO,.LTD E-Catalog 4th Year Member

IXTP3N100D2

IXTP3N100D2  IXYS 2016+ 18000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IXTP3N120

IXTP3N120  3592China
Nosin (HK) Electronics Co. E-Catalog 12th Year Member

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