【IXTT140P10T Transistors - FETs, MOSFETs - Single IXYS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IXTT140P10T

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

IXYS

Description:

MOSFET P-CH 100V 140A TO-268

Series:

TrenchP

Packaging:

Tube

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

400nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

31400pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

568W (Tc)

Rds On (Max) @ Id, Vgs:

12 mOhm @ 70A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268

Package / Case:

TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

1 - 5 of 5 Record(s)
IXTT140P10T
 Part NumberBrandD/CQtyCompany

IXTT140P10T

IXYS2015+1200Bonase Electronics (HK) Co., Limited    12

IXTT140P10T

IXYS2016+1000MY Group (Asia) Limited    13

IXTT140P10T

IXYS POWER17+500North Star Technology (HK) Co.,Ltd  1
Warranty

IXTT140N10P

IXYS13+13800A & C Int'l Electronics Co.    11

IXTT140N10P

IXYS13185HongKong Wanghua Technology Limited   4

Related Part Number

IXTT16N10D2 | IXTT170N10P | IXTT10N100D | IXTT110N10P | IXTT120N15P | IXTT140N10P | IXTT16N10D2 | IXTT170N10P | IXTT1N100 | IXTT20N50D | IXTT26N50P
IXTT140P10T Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOBIP]
[HGReferer_TradeShowSponsor]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IXTT140P10T Related Keywords in 2018 USA

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