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【JAN2N3019S Transistors - Bipolar (BJT) - Single MOTOROLA】【27SF512703C】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

JAN2N3019S

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Microsemi Corporation

Description:

TRANS NPN 80V 1A

Series:

Military, MIL-PRF-19500/391

Packaging:

Bulk

Transistor Type:

NPN

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

80V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):

10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

50 @ 500mA, 10V

Power - Max:

800mW

Frequency - Transition:

-

Operating Temperature:

-65°C ~ 200°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-205AD, TO-39-3 Metal Can

Supplier Device Package:

TO-39

Search For JAN2N3019S - JAN2N3019S Product Information : 

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1 - 10 of 10 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company
Warranty

JAN2N3019S

JAN2N3019S MOTOROLA60China
CHIPMALL ELECTRONICS LIMITED  3

JAN2N3019S

JAN2N3019S MOTOROL234China
Ande Electronics Co., Limited  12

JAN2N3019S

JAN2N3019S MOTOROLA25600China
WALTON ELECTRONICS CO., LIMITED  2

JAN2N3019S

JAN2N3019S Microsemi Corporation2016+18000China
MY Group (Asia) Limited  13

JAN2N3019S

JAN2N3019S MOTOROLA01+200China
LUCK IN INTERNATIONAL GROUP LIMITED5

27SF512

27SF512 09+4500China
Gaokeda Technology (HK) Limited  10
Warranty

27SF512-70-3C-PGE

27SF512-70-3C-PGE SST1150+791China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

27SF512-70-3C-PGE

27SF512-70-3C-PGE SST07+5200China
Icwindows Electronics HK Co.,Limited 12

27SF512703CPG*

27SF512703CPG* 09+3000China
Amos Electronics Co., Limited  11

27SF512-70-3C-PG

27SF512-70-3C-PG 0940+200China
Yu Hong Technologies Limited 2

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