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【JAN2N3501UB】【Transistors - Bipolar (BJT) - Single】【MOCROSEMI】【MICROSEMI CORPORATION】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

JAN2N3501UB

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Microsemi Corporation

Description:

TRANS NPN 150V 0.3A TO39

Series:

Military, MIL-PRF-19500/366

Packaging:

Bulk

Transistor Type:

NPN

Current - Collector (Ic) (Max):

300mA

Voltage - Collector Emitter Breakdown (Max):

150V

Vce Saturation (Max) @ Ib, Ic:

400mV @ 15mA, 150mA

Current - Collector Cutoff (Max):

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 150mA, 10V

Power - Max:

500mW

Frequency - Transition:

-

Operating Temperature:

-65°C ~ 200°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

3-SMD, No Lead

Supplier Device Package:

UB

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Part Number Part Number Brand D/C Desc Qty Country /
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JAN2N3501UB

JAN2N3501UB  MOCROSEMI 2017 1Hong Kong
LETRADE LIMITED E-Catalog 1st Year Member

JAN2N3501UB

JAN2N3501UB  Microsemi Corpo... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

JAN2N3009

JAN2N3009  MOTOROLA 02+CAN 100China
Wide Key International Limited E-Catalog 13th Year Member

JAN2N3019

JAN2N3019  NS CAN3 6224China
Belt (HK) Electronics Co E-Catalog 11th Year Member

JAN2N3250A

JAN2N3250A  100USA
Val Technologies, Inc E-Catalog 14th Year Member

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