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【JAN2N7335】【IR】【MICROSEMI CORPORATION】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 4P-CH 100V 0.75A MO-036AB Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300, 7.62mm) Supplier Device Package: * HKinDataSheet_ZO1GOSIT
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JAN2N7335

JAN2N7335  IR 200China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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JAN2N7335

JAN2N7335  Microsemi Corpo... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

JAN2N7335

JAN2N7335  Microsemi 07+IC 2300China
Dopoint Hi-Tech Limited E-Catalog 12th Year Member

JAN2N700/18

JAN2N700/18  MOT 03+CAN4 1145China
Xinye International Technology Limited E-Catalog 7th Year Member

JAN2N7225

JAN2N7225  MICROSEMI 2015+TO-254 1000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

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MOSFET 4P-CH 100V 0.75A MO-036AB Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300, 7.62mm) Supplier Device Package: * HKinDataSheet_ZO1GOSIT
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