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【JAN2N7335】【Transistors - FETs, MOSFETs - Arrays】【MICROSEMI CORPORATION】【MICROSEMI】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

JAN2N7335

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Microsemi Corporation

Description:

MOSFET 4P-CH 100V 0.75A MO-036AB

Series:

Military, MIL-PRF-19500/599

Packaging:

Bulk

FET Type:

4 P-Channel

FET Feature:

Standard

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

750mA

Rds On (Max) @ Id, Vgs:

1.4 Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

1.4W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

14-DIP (0.300", 7.62mm)

Supplier Device Package:

-

Search For JAN2N7335 - JAN2N7335 Product Information : 

MOSFET 4P-CH 100V 0.75A MO-036AB Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300, 7.62mm) Supplier Device Package: * HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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Company

JAN2N7335

JAN2N7335  Microsemi Corpo... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

JAN2N7225

JAN2N7225  MICROSEMI 2015+TO-254 1000China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

JAN2N708

JAN2N708  MOT 03+CAN3 5689China
Icwindows Electronics HK Co.,Limited E-Catalog 12th Year Member

JAN2N706

JAN2N706  Microsemi Corpo... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

JAN2N700

JAN2N700  2000China
Novelty Electronics Limited E-Catalog 9th Year Member

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MOSFET 4P-CH 100V 0.75A MO-036AB Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 750mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300, 7.62mm) Supplier Device Package: * HKinDataSheet_ZO1GOSIT
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