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【JANS2N3501 Transistors - Bipolar (BJT) - Single IR】【2805012226230】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single


Microsemi Corporation


TRANS NPN 150V 0.3A TO-39


Military, MIL-PRF-19500/366



Transistor Type:


Current - Collector (Ic) (Max):


Voltage - Collector Emitter Breakdown (Max):


Vce Saturation (Max) @ Ib, Ic:

400mV @ 15mA, 150mA

Current - Collector Cutoff (Max):

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 150mA, 10V

Power - Max:


Frequency - Transition:


Operating Temperature:

-65°C ~ 200°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-205AD, TO-39-3 Metal Can

Supplier Device Package:


Search For JANS2N3501 - JANS2N3501 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /

JANS 2N3501

JANS 2N3501 IR300China
Ande Electronics Co., Limited  12


JANS2N3501 16+250China
Sapu Electronics Corporation Limited 1


JANS2N3501 MOT9010+6China
Hk Guoyuan Electronics Technology Limited  9


JANS2N3501 Microsemi2015+1400China
Bonase Electronics (HK) Co., Limited  12


JANS2N3501 Microsemi Corporation2016+8000China
MY Group (Asia) Limited  13


2805-01-222-6230 12+/13+5500Hong Kong
A & C Int'l Electronics Co.  11

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2805012226230 | JANS1N5811US | JANS2N3501 | JANSR2N2907A | JANTV4N22 | JANTX1N2992B | B45197A5225M206 | JANTX1N3042B | JANTX1N35951 | IDT7164S45P

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