【K30N60 ChipMall】【HY29F400TT70I】【BS616S4010VEC70】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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K30N60 Description

Jun 12, 2013 150 C. K30N60 PG-TO-247-3. Maximum Ratings. Parameter. Symbol. Value. Unit. Collector-emitter voltage. VC E. 600. V. DC collector current. Vorl ufige Daten. Preliminary Data. IGBT,Wechselrichter / IGBT,Inverter. H chstzul ssige Werte / Maximum Rated Values. Kollektor-Emitter- Sperrspannung. Apr 8, 2014 This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series of. IGBTs Feb 11, 2016 Epoxy meets UL94, V0. . Lead-free package. . Recommended torque: 0.4 to 0.6 N m. In order to meet environmental requirements, ST offers THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN-. TATION OF THE INFINEON TECHNOLOGIES
1 - 11 of 11 Record(s)
K30N60, HY29F400TT70I, BS616S4010VEC70
 Part NumberBrandD/CQtyCompany

K30N60

ChipMall10+10CHIPMALL ELECTRONICS LIMITED    3

K30N60

Infineon2878Nosin (HK) Electronics Co.    12

K30N60

INFINEON1860Jinmingsheng Technology (HK) Co.,Limited   9

K30N60

INFINEON13+10000SHIJIa BAIKE (HK) ELECTRONICS LIMITED   2

K30N60

Infineon14840PANSON ELECTRONICS (HK) CO.,Limited  1

HY29F400TT-70I

HY2014+6900Bonase Electronics (HK) Co., Limited    12

HY29F400TT-70I

HYNIX05+9368HK Jiaweiyi Technology Limited    12

HY29F400TT-70I

HYNIX06+15000Kehai Weiye International Electronics Limited    11

HY29F400TT-70I

N/A2015+685MARKTIME CORPORATION LIMITED  2

HY29F400TT-70I

HY3000Forever Electronic Tech (HK) Limited   1

BS616S4010VEC-70

BSI00+14112HK Jiaweiyi Technology Limited    12

Related Part Number

HY29F400TT70I | BS616S4010VEC70 | K30K006YP | K30M4045 | K30N06 | K30N60 | K30N60H | K30N60HS | K30N60HS | K30N60T | K30T100
K30N60 Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIIB]
[HGReferer_OurService]
[HKIN20171020GESTYLE]

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