【K75T60 INFONEON】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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You Are Here: Home > Part Number Index > Index 17 > Product (Page: 504) > K75T60
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K75T60 Description

Package. IKW75N60T. 600V. 75A. 1.5V. 175 C. K75T60 . PG-TO247-3. Maximum Ratings. Parameter. Symbol. Value. Unit. Collector-emitter voltage, Tj 25 C. May 10, 2013 About IGBTs. An insulated gate bipolar transistor (IGBT) is a type of power transistor that combines the high-speed switching and voltage drive FMMT417TD. AEC-Q101. 417. 7. 8. 500. Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Best in class TO247. Short circuit withstand time 10 s. Designed for : - Frequency Converters. - Uninterrupted Power Supply. TrenchStop and Fieldstop DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
1 - 5 of 5 Record(s)
 Part NumberBrandD/CQtyCompany


INFONEON3430Belt (HK) Electronics Co    12


INFINEON2015+2000Bonase Electronics (HK) Co., Limited    13

K75T60 IKW75N60T

15+5586Hong Kong In Fortune Electronics Co., Limited    13

K75T60 IKW75N60T



Infineon.ORI1549+240Kwong Shun Electronics (HK)Co.   14

Related Part Number

K75T60A | K-7514C | K-7514C | K-7514F | K754001520PM0F060 | K75600 | K75A06K3 | K75A80V | K75N60 | K75N60T | K75T60A
K75T60 Ref.:

K75T60 Related Keywords in 2019 USA

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