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【LAE67F OSRAM】【S29GL01GS11DHI020】【HEF4518BP652】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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LAE67F, S29GL01GS11DHI020, HEF4518BP652
 Part NumberBrandD/CQtyCompany
LAE67F
 
10+20000C & I Semiconductors Co., Limited   7
LAE67FOSRAM11+2900Hong Kong In Fortune Electronics Co., Limited    12
LAE67FOSRAM2015+40000Bonase Electronics (HK) Co., Limited    11
LAE67FOSRAM10+268000HK Hongkai Electronics Limited    11
LAE67FOSRAM11+2000H&T Electronics Co., Ltd   4
S29GL01GS11DHI020ORIGINAL2016+1000Hongkong Rixin International Trading Company    1
S29GL01GS11DHI020
 
SPANSION14+5200Taiwan Anprosperous Technology Co.,Limited    11
S29GL01GS11DHI020
 
SPANSION1143+179Acon Electronics Limited    11
S29GL01GS11DHI020Spansion9980SSF Group (Asia) Limited    9
S29GL01GS11DHI020
 
SPANSION11+280Sierra Superior Electron Limited   3
HEF4518BP,652NXP Semiconductors15810Riking Technology (HK) Co., Limited    7
HEF4518BP,652PHILIPS465000Ysx Tech Co., Limited   7
HEF4518BP,652Philips Semiconducto4875C-March Electronics Co.,Ltd    5
HEF4518BP,652NXP Semiconductors36800HongKong Wanghua Technology Limited   3
HEF4510BPPHILIPS02+387Well Rich Trading Group Limited    7

S29GL01GS11DHI020 Description

IC FLASH 1GBIT 110NS 64FBGA Series: GL-S Format - Memory: FLASH Memory Type: FLASH - NOR Memory Size: 1G (64M x 16) Speed: 110ns Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40~C ~ 85~C Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)
LAE67F Ref.: [hkinbatch20170120] [HGCacheDateZOITOEZS] [HGReferer_STC_Overview] [HKINGESTYLE]

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