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【MBR60020CT】【GENESIC SEMICONDUCTOR】【MOTOROLA】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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DIODE MODULE 20V 600A 2TOWER Series: - Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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MBR60020CT

MBR60020CT  GeneSiC Semicon... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

MBR60020CT

MBR60020CT  MOTOROLA MODULE 200Hong Kong
Digchip Technology Co.,Limited E-Catalog 2nd Year Member

MBR60035CTL

MBR60035CTL  HITACHI IGBT 100China
Yaspro Electronics (Shanghai) Co., Ltd E-Catalog 2nd Year Member

MBR600100CT

MBR600100CT  GeneSiC Semicon... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

MBR60035CTL

MBR60035CTL  35China
Beijing Circle World(HuanQiuChangTong) Electronics Co., Ltd E-Catalog 1st Year Member

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[hkinbatch023] [hkingendate20171110] [hkingenidC156727][hkinOfferInventC]
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DIODE MODULE 20V 600A 2TOWER Series: - Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower HKinDataSheet_ZO1GOSIT
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