【ME15N10/ME15N10G MATSUKI】【JN5121000M01V】【24AA64TE/ST】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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ME15N10/ME15N10G Description

THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. Junction-to-Case - Steady State. R JC. 1.4. C/W. Junction-to-Ambient - Steady THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. Junction to Case Steady State. R JC. 1.8. C/W. Junction to Ambient Apr 7, 2010 Avalanche current, single pulse3). I AS. T C=25 C. 50. Avalanche energy, single pulse. E AS. I D=20 A, R GS=25 . 60. mJ. Reverse diode dv / DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Oct 22, 2009 3 Safe operating area. 4 Max. transient thermal impedance. I D=f(V DS); T C=25 C; D =0. Z thJC=f(t p) parameter: t p parameter: D =t p/T. 1 s.
1 - 10 of 10 Record(s)
ME15N10/ME15N10G, JN5121000M01V
 Part NumberBrandD/CQtyCompany


2732Belt (HK) Electronics Co    11


MATSUKI24300Hong Kong In Fortune Electronics Co., Limited    12


20Kwong Shun Electronics (HK)Co.   13


35Yaspro Electronics (Shanghai) Co., Ltd    2


M15010Hengguang (HK) Electronics Trading Limited   13


JENNIC2015+6750Bonase Electronics (HK) Co., Limited    12


Jennic2012+6405Showtech International (HK) Co.,Limited   11


JENNIC2015+39651Bonase Electronics (HK) Co., Limited    12


NXP1200Charlott-Electronic   2


30Overseas Electronics Development Co., Limited   8

Related Part Number

24AA64TE/ST | JN5121000M01V | ME15N10 | ME15N10/MDD1903RH | ME15N10G | ME15N48CS | ME173X | ME19024ZS | ME19024ZS2 | ME19F1 | ME1A5B
ME15N10/ME15N10G Ref.:

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