Search For ME15N10/ME15N10G - ME15N10/ME15N10G Product Information :
ME15N10/ME15N10G THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. Junction-to-Case - Steady State. R JC. 1.4. C/W. Junction-to-Ambient - Steady THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. Junction to Case Steady State. R JC. 1.8. C/W. Junction to Ambient Apr 7, 2010 Avalanche current, single pulse3). I AS. T C=25 C. 50. Avalanche energy, single pulse. E AS. I D=20 A, R GS=25 . 60. mJ. Reverse diode dv / DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Oct 22, 2009 3 Safe operating area. 4 Max. transient thermal impedance. I D=f(V DS); T C=25 C; D =0. Z thJC=f(t p) parameter: t p parameter: D =t p/T. 1 s., 24AA64TE/ST IC EEPROM 64KBIT 400KHZ 8TSSOP Series: - Format - Memory: EEPROMs - Serial Memory Type: EEPROM Memory Size: 64K (8K x 8) Speed: 100kHz, 400kHz Interface: I2C, 2-Wire Serial Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40～C ~ 125～C Package / Case: 8-TSSOP (0.173, 4.40mm Width) Supplier Device Package: 8-TSSOP ...
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