Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
TRANS NPN 400V 12A TO220AB
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Current - Collector Cutoff (Max):
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5A, 5V
Power - Max:
Frequency - Transition:
-65Â°C ~ 150Â°C (TJ)
Package / Case:
Supplier Device Package:
Search For MJE13009 - MJE13009 Product Information :
MJE13009 MJE13009 /D. MJE13009G. SWITCHMODE Series. NPN Silicon Power. Transistors. The MJE13009G is designed for high voltage, high speed power switching The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and MJE13009 are silicon NPN transistors designed for high voltage, high speed switching applications. MARKING: FULL PART NUMBER. MAXIMUM RATINGS: The MJE13009 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and Oct 21, 2015 The UTC MJE13009 -Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly ...
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Part Number Brand
Country / Region
SHIJIa BAIKE (HK) ELECTRONICS LIMITED
ONSTAR ELECTRONICS CO., LIMITED
A & C Int'l Electronics Co.
Hongkong Intercell Electronics Co.,Limited
CHIPMALL ELECTRONICS LIMITED
Kang Da Electronics Co.
Riking Technology (HK) Co., Limited
Hong Kong Red Top Boat Development Co., Limited
Xian Neng Technology (Hongkong) International Limited
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