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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd , Gaokeda Technology (HK) Limited , Hong Kong In Fortune Electronics Co., Limited  ...
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MMDF2P02HDR2 MMDF2P02HDR2  ON 01+SOP8 935China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 14th Year Member

MMDF2P02HDR2 MMDF2P02HDR2  ON 09+SOP-8 1500China
Gaokeda Technology (HK) Limited E-Catalog 9th Year Member

MMDF2P02HDR2 MMDF2P02HDR2  SOP8 925China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 11th Year Member

MMDF2P02HDR2 MMDF2P02HDR2  ON 0521MOSFET 2P-CH 20... 1067USA
Dan-Mar Components Inc. E-Catalog 9th Year Member

MMDF2P02HDR2 MMDF2P02HDR2  ON/MOT 2015+SOP8 22750China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

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AFBR709JAMZCG1 | C4X20/24VDC | G6J2PYDC5V | HEF4013D | ISL83071EIBZAT | L59CB/1EGW | LC1D245F7C | LFH07KY5P4B472KTB | LMS283GF06 | MT47H64M16HR-3%3AH | OSPW56A1AMN | P4NB50FP | SSS11N60 | TC7WH04FU | TEL0084 | XC2C2566PQ208C | XC6SLX100T2FGG484C [hkinbatch020] [hkingendate20170123] [hkingenidC24483][hkinOfferInventC]
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MOSFET 2P-CH 20V 3.3A 8-SOIC Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.3A Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 588pF @ 16V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT

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