MRF920 DATASHEET Figure 11. Performance in Broadband Circuit (at Small Signal) f, FREQUENCY ( MHz). --10. --25. 910. --20. --15. 970. VDS = 26 Vdc. IDQ = 400 mA. 920 . 950. c. RF Power LDMOS Transistor. N--Channel Enhancement--Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 920 to. 920 MHz. 19.6. 35.4. 6.0. --37.3. 940 MHz. 19.6. 35.6. 6.0. --37.1. 960 MHz . Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, 920 --960 MHz Bandwidth. applied for the GSM/GSM EDGE 920 -960 MHz frequency band. The reference design is tuned to offer the best tradeoff between good EDGE linearity and good RF Power Product Porfolio (continued). Table 2. RF Power Products 600 960 MHz (continued). Output. Power. (W). Product. Go to page. 177. 920 . 960. ...
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Part Number Brand
Country / Region
HongKong Wanghua Technology Limited
HK Kenenda Electronics Company Limited
Lattice International Trading Co., Limited
Global HY Electronics Technology (HK) Co., Limited
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