【MUN5115DW1T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased ON】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

MUN5115DW1T1G

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Brand:

ON Semiconductor

Description:

TRANS 2PNP PREBIAS 0.25W SOT363

Series:

-

Packaging:

Tape & Reel (TR)

Transistor Type:

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1) (Ohms):

10k

Resistor - Emitter Base (R2) (Ohms):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

250mW

Mounting Type:

Surface Mount

Package / Case:

6-TSSOP, SC-88, SOT-363

Supplier Device Package:

SC-88/SC70-6/SOT-363

1 - 5 of 5 Record(s)
MUN5115DW1T1G
 Part NumberBrandD/CQtyCompany
STRCWarranty

MUN5115DW1T1G
 

ON16+83000Yingxinyuan INT'L (Group) Limited    15

MUN5115DW1T1G

ON15+12000Bonase Electronics (HK) Co., Limited    13

MUN5115DW1T1G

ON16+17000Ande Electronics Co., Limited    13

MUN5115DW1T1G

ON9000Hong Kong In Fortune Electronics Co., Limited    13

MUN5115DW1T1G

ON Semiconductor8000MY Group (Asia) Limited    13

Related Part Number

MUN5116DW1T1 | MUN5116DW1T1G | IMH8AT108 | IMH9AT110 | MIMD10A-7-F | MUN5111DW1T1G | MUN5112DW1T1G | MUN5113DW1T1G | MUN5114DW1T1G | MUN5116DW1T1 | MUN5116DW1T1G
MUN5115DW1T1G Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZIO]
[HGReferer_ContactUs]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

MUN5115DW1T1G Related Keywords in 2018 USA

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