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【NDD60N900U11G】【Transistors - FETs, MOSFETs - Single】【ON】【ON SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

NDD60N900U11G

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

ON Semiconductor

Description:

MOSFET N-CH 600V 5.9A IPAK-4

Series:

-

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

360pF @ 50V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

74W (Tc)

Rds On (Max) @ Id, Vgs:

900 mOhm @ 2.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

I-Pak

Package / Case:

TO-251-3 Short Leads, IPak, TO-251AA

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Part Number Part Number Brand D/C Desc Qty Country /
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NDD60N900U1-1G

NDD60N900U1-1G  ON 1000Taiwan
E-Power Market Co.,Ltd E-Catalog 9th Year Member

NDD60N900U1-1G

NDD60N900U1-1G  ON Semiconducto... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

NDD60N900U1-1G

NDD60N900U1-1G  ONsemi 75Taiwan
Sunrich-Tech Corporation 6th Year Member

NDD60N900U1-1G

NDD60N900U1-1G  ON 13+ 80000China
Hitsem International Electronics Co.,Limited E-Catalog 12th Year Member

NDD60N900U1-1G

NDD60N900U1-1G  75China
Kwong Shun Electronics (HK)Co. E-Catalog 13th Year Member

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