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【NDT01N60T1G】【Transistors - FETs, MOSFETs - Single】【ON】【ON SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


ON Semiconductor


MOSFET N-CH 600V 0.4A SOT223





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

400mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

3.7V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

7.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

160pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

2.5W (Tc)

Rds On (Max) @ Id, Vgs:

8.5 Ohm @ 200mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223 (TO-261)

Package / Case:

TO-261-4, TO-261AA

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NDT01N60T1G  ON 13+SOP8 800China

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NDT01N60T1G  ON Semiconducto... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member


NDT01N60T1G  ON 1000Taiwan
E-Power Market Co.,Ltd E-Catalog 9th Year Member


NDT01N60T1G  ONsemi 50Taiwan
Sunrich-Tech Corporation 6th Year Member


NDT01N60T1G  550China
Kwong Shun Electronics (HK)Co. E-Catalog 13th Year Member

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