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【NNCD56JT1A】【NEC】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd , Hong Kong In Fortune Electronics Co., Limited , Gaokeda Technology (HK) Limited  ...
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NNCD5.6J-T1-A

NNCD5.6J-T1-A  NEC 0637+SOD323 1369China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 14th Year Member

NNCD5.6J-T1-A

NNCD5.6J-T1-A  SOT523 2249China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

NNCD5.6D-T1

NNCD5.6D-T1  NEC 09+SOD-323 1660China
Gaokeda Technology (HK) Limited E-Catalog 9th Year Member

NNCD5.6D-T1

NNCD5.6D-T1  NEC SOD-323 5520China
Shenzhen Zhengrun Electronics Co.,Ltd E-Catalog 13th Year Member

NNCD5.6F-T1B

NNCD5.6F-T1B  NEC 02+SOT23-3 2655China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT

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