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【NNCD56JT1A】【NEC】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

NNCD5.6J-T1-A

NNCD5.6J-T1-A  SOT523 2249China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

NNCD5.6J-T1-A

NNCD5.6J-T1-A  NEC 0637+SOD323 1369China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 15th Year Member

NNCD5.6GT1

NNCD5.6GT1  NEC 2002 45000
In-Stock
Japan
Pacific Corporation E-Catalog 17th Year Member

NNCD5.6C

NNCD5.6C  NEC 05+SOD5230603-5.6V 15000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 15th Year Member

NNCD5.6LH-T1

NNCD5.6LH-T1  NEC 03+5-Pin SC-88A 2790China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

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0805ZC102MAT2A | 1N5918BPE3 | 22011094%2F510209 | 51451658 | 59629161702MXX | 744373770033 | AD813ARZ | AM270256 | AN6137SB | AT28C256DM
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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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