Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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