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【NNCD56JT1A】【NEC】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

NNCD5.6J-T1-A

NNCD5.6J-T1-A  SOT523 2249China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

NNCD5.6J-T1-A

NNCD5.6J-T1-A  NEC SOT523 1760China
HK BAOYE TECHNOLOGY ELECTRONIC LIMITED E-Catalog 2nd Year Member

NNCD5.6D-T1

NNCD5.6D-T1  NEC 09+SOD-323 1660China
Gaokeda Technology (HK) Limited E-Catalog 9th Year Member

NNCD5.6G

NNCD5.6G  NEC 15+SOT-153 65000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

NNCD5.6F-T1B

NNCD5.6F-T1B  NEC 02+SOT23-3 2655China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

Buy: NNCD56JT1A
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Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology. Corporation, and Renesas Electronics Corporation took over all Apr 1, 2010 6 . Renesas Electronics has used reasonable care in preparing the information included in this document, but .. T1 . T1B, T2B T1B, T2B. T1 , T2. T1 , T2. T1 , T2. Quantity (pcs/reel). 3000. 3000. 3000. 3000. 3000. 3000. 3000. 6 . 5. 4. 3. 2. 1. 2002. 2004. 2006. 2008. 2010. 2012. Year. 7th gen. Power MOS FET Technologies and Trend in RDS(on) T1 electrode. Gate electrode. Separation area. T2 electrode. TRIAC and Thyristor Development Roadmap. 00. 02. 6 . PU/PD: Denotes the presence of an internal pullup or pulldown. Pullups and pulldowns can be enabled or disabled through software. 7. Min = Minimum T1 . TestV1. I/O. Floating. TestV2. Analog test. I/O. A16. TestV2. I/O. Floating. Selection between JTAG mode and. Test. Test 22 /100 . Diode. DCTSI1. NNCD5 . 6J . Figure 5-48. Diode. DCTSI2. NNCD5 . 6J . Diode. DRTSO1. NNCD5 . 6J . Diode. HKinDataSheet_ZO1GOSIT
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