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【NTJD5121NT2G】【ON SEMICONDUCTOR】【O】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 60V 0.295A SOT363 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363 HKinDataSheet_ZO1GOSIT
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NTJD5121NT2G

NTJD5121NT2G  13870Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

NTJD5121NT2G

NTJD5121NT2G  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

NTJD5121NT2G

NTJD5121NT2G  O SC70 9000China
Hengguang (HK) Electronics Trading Limited E-Catalog 13th Year Member

NTJD5121NT1G

NTJD5121NT1G  ON Semiconducto... 2016+ 15000China
MY Group (Asia) Limited E-Catalog 12th Year Member

NTJD5121NT1G

NTJD5121NT1G  ON 13+SO363 5230China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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MOSFET 2N-CH 60V 0.295A SOT363 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363 HKinDataSheet_ZO1GOSIT
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