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【NTLJD2105LTBG】【ON】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd , Bonase Electronics (HK) Co., Limited , Hong Kong In Fortune Electronics Co., Limited  ...
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NTLJD2105LTBG

NTLJD2105LTBG  ON 15+QFN 3000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 14th Year Member

NTLJD2105LTBG

NTLJD2105LTBG  ON 2015+QFN 3016China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

NTLJD2105LTBG

NTLJD2105LTBG  ON 15+QFN 3900China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

NTLJD2105LTBG

NTLJD2105LTBG  ON 06+07QFN 2996Hong Kong
JFJ Electronics Co.,Limited E-Catalog 12th Year Member

NTLJD2105LTBG

NTLJD2105LTBG  ON 09+WDFN-6 2000China
Gaokeda Technology (HK) Limited E-Catalog 9th Year Member

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MOSFET N/P-CH 8V 2.5A 6-WDFN Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25~C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 520mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT
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MOSFET N/P-CH 8V 2.5A 6-WDFN Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25~C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: - Power - Max: 520mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT

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