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【NTLJD3115PT1G】【ON】【ONS】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 20V 2.3A 6-WDFN Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT
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NTLJD3115PT1G

NTLJD3115PT1G  ON 10+QFN 2400
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 7th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON 2015+QFN-64 54000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON 95+DIP-40 18China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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NTLJD3115PT1G

NTLJD3115PT1G  ON 16+DFN6 3500
In-Stock
Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ONS 18727Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

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MOSFET 2P-CH 20V 2.3A 6-WDFN Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT
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