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Hongkong Intercell Electronics Co.,Limited , KYNIX SEMICONDUCTOR HONG KONG LIMITED , CHIPMALLS ELECTRONICS LIMITED  ...
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NTLJD3115PT1G NTLJD3115PT1G  ON QFN 2400
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China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

NTLJD3115PT1G NTLJD3115PT1G  ON 1032
In-Stock
Hong Kong
KYNIX SEMICONDUCTOR HONG KONG LIMITED E-Catalog 3rd Year Member

NTLJD3115PT1G NTLJD3115PT1G  18China
CHIPMALLS ELECTRONICS LIMITED E-Catalog 2nd Year Member

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NTLJD3115PT1G NTLJD3115PT1G  ON 08+WDFN6 388China
HK TWO L ELECTRONIC LIMITED E-Catalog 5th Year Member

NTLJD3115PT1G NTLJD3115PT1G  ON 10+ 10000China
Aric Electronics Technology (HK) Co., Limited E-Catalog 11th Year Member

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03410311011 | 6130282316 | BS901AS24VDC | BZW0431 | IRF01BH100K | NAS463WDD616LG [hkinbatch019] [hkingendate20161024] [hkingenidC183904][hkinOfferInventC]
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MOSFET 2P-CH 20V 2.3A 6-WDFN Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT

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