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【NTLJD3115PT1G】【ON】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd , TY International components Limited , Hongkong Rixin International Trading Company  ...
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NTLJD3115PT1G

NTLJD3115PT1G  ON 10+QFN 1234China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd E-Catalog 14th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON 13+DFN6 3500
In-Stock
China
TY International components Limited E-Catalog 7th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON WDFN6 65800Hong Kong
Hongkong Rixin International Trading Company E-Catalog 1st Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON 2015+QFN-64 54000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

NTLJD3115PT1G

NTLJD3115PT1G  ON 12+QFN 4133China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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03410311011

6130282316

BS901AS24VDC

BZW0431

IRF01BH100K

NAS463WDD616LG
[hkinbatch021] [hkingendate20170428] [hkingenidC141587][hkinOfferInventC]
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MOSFET 2P-CH 20V 2.3A 6-WDFN Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) HKinDataSheet_ZO1GOSIT
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