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【NTMFD4C87NT1G】【ON SEMICONDUCTOR】【ON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 30V 8DFN Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 11.7A, 14.9A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) HKinDataSheet_ZO1GOSIT
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NTMFD4C87NT1G

NTMFD4C87NT1G  ON Semiconducto... 11100Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

NTMFD4C87NT1G

NTMFD4C87NT1G  ON 1000Taiwan
E-Power Market Co.,Ltd E-Catalog 9th Year Member

NTMFD4C87NT1G

NTMFD4C87NT1G  18000Hong Kong
Lungke Electronics Technology Co., Limited E-Catalog 7th Year Member

NTMFD4C87NT1G

NTMFD4C87NT1G  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

NTMFD4C87NT1G

NTMFD4C87NT1G  ONsemi 1450Taiwan
Sunrich-Tech Corporation 6th Year Member

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MOSFET 2N-CH 30V 8DFN Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 11.7A, 14.9A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) HKinDataSheet_ZO1GOSIT
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