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【NTZD3155CT1H】【ON SEMICONDUCTOR】【ON】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET N/P-CH 20V SOT563 Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6 HKinDataSheet_ZO1GOSIT
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NTZD3155CT1H

NTZD3155CT1H  ON Semiconducto... 13215Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

NTZD3155CT1H

NTZD3155CT1H  10DEVICE 7608South Korea
Daejon Electronics E-Catalog 6th Year Member

NTZD3155CT1H

NTZD3155CT1H  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

NTZD3155CT1H

NTZD3155CT1H  ON SOT563 33800Hong Kong
Asia Components Co.,Limited E-Catalog 10th Year Member

NTZD3155CT1H

NTZD3155CT1H  ON 15000China
Shenzhen HDX Electronic Co.,Limited. 1st Year Member

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MOSFET N/P-CH 20V SOT563 Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6 HKinDataSheet_ZO1GOSIT
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