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【NVMFD5483NLT3G】【ONSEMI】【ON SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 60V 6.4A 8DFN Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) HKinDataSheet_ZO1GOSIT
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NVMFD5483NLT3G

NVMFD5483NLT3G  ONsemi 5000Taiwan
Sunrich-Tech Corporation 6th Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  5000China
Kwong Shun Electronics (HK)Co. E-Catalog 13th Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  ON Semiconducto... 3500Hong Kong
Wuhan P&S Information Technology Co., Ltd. E-Catalog 3rd Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  ON Semiconducto... 2009+ 3500China
Real Chips Electronics International LTD E-Catalog 1st Year Member

NVMFD5877NLT1G

NVMFD5877NLT1G  ON 2016+QFN-8 1000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

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MOSFET 2N-CH 60V 6.4A 8DFN Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) HKinDataSheet_ZO1GOSIT
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