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【NVMFD5483NLT3G】【Transistors - FETs, MOSFETs - Arrays】【ON SEMICONDUCTOR】【ON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

NVMFD5483NLT3G

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

ON Semiconductor

Description:

MOSFET 2N-CH 60V 6.4A 8DFN

Series:

-

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

6.4A

Rds On (Max) @ Id, Vgs:

36 mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

668pF @ 25V

Power - Max:

3.1W

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerTDFN

Supplier Device Package:

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Search For NVMFD5483NLT3G - NVMFD5483NLT3G Product Information : 

MOSFET 2N-CH 60V 6.4A 8DFN Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) HKinDataSheet_ZO1GOSIT
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NVMFD5483NLT3G

NVMFD5483NLT3G  ON Semiconducto... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  ON 1000Taiwan
E-Power Market Co.,Ltd E-Catalog 9th Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  ONsemi 5000Taiwan
Sunrich-Tech Corporation 6th Year Member

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NVMFD5483NLT3G  5000China
Kwong Shun Electronics (HK)Co. E-Catalog 13th Year Member

NVMFD5483NLT3G

NVMFD5483NLT3G  ON Semiconducto... 2009+ 3500China
Real Chips Electronics International LTD E-Catalog 1st Year Member

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MOSFET 2N-CH 60V 6.4A 8DFN Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) HKinDataSheet_ZO1GOSIT
[HKINOLDPD] [HKIN20171020MDPartDetails]

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