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【PD55015E】【ST】【STMICROELECTRONICS】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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PD55015-E . RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. Features. Excellent thermal stability. Sep 27, 2010 Doc ID 18030 Rev 1. 1/13. 13. STEVAL-TDR016V1. RF power amplifier using 1 x PD55015E . N-channel enhancement-mode lateral MOSFETs. Nov 17, 2009 PD55015-E (S). 1.3 C/W. 73.1 W. 3.6 W. 19.8 W. 25.0 W. PD57002-E (S). 20 C/ W. 4.75 W. 2.1 W. 4.0 W. 4.2 W. PD57006-E (S). 5.0 C/W. Transmission Line. W=4.98 mm, L= 5.3 mm. RF in, RF out SMA-CONN. 60 mils. JOHNSON. 142-0701-801. PD55015-E . LDMOS. STMicroelectronics. PD55015- PD55015-E and Freescales MRF1518N, both of which have comparable power capability at 500. MHz. The comparison data between the GaN FET. HKinDataSheet_ZO1GOSIT
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PD55015-E

PD55015-E  ST 2011+POWERSO-10 1006
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

PD55015-E

PD55015-E  ST 2011+ 647China
Jinmingsheng Technology (HK) Co.,Limited E-Catalog 9th Year Member

PD55015-E

PD55015-E  STMicroelectron... 14500Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

PD55015-E

PD55015-E  ST 145China
WIN AND WIN ELECTRONICS LIMITED E-Catalog 1st Year Member

PD55015-E

PD55015-E  ST 2011+POWERSO-10 890China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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PD55015-E . RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. Features. Excellent thermal stability. Sep 27, 2010 Doc ID 18030 Rev 1. 1/13. 13. STEVAL-TDR016V1. RF power amplifier using 1 x PD55015E . N-channel enhancement-mode lateral MOSFETs. Nov 17, 2009 PD55015-E (S). 1.3 C/W. 73.1 W. 3.6 W. 19.8 W. 25.0 W. PD57002-E (S). 20 C/ W. 4.75 W. 2.1 W. 4.0 W. 4.2 W. PD57006-E (S). 5.0 C/W. Transmission Line. W=4.98 mm, L= 5.3 mm. RF in, RF out SMA-CONN. 60 mils. JOHNSON. 142-0701-801. PD55015-E . LDMOS. STMicroelectronics. PD55015- PD55015-E and Freescales MRF1518N, both of which have comparable power capability at 500. MHz. The comparison data between the GaN FET. HKinDataSheet_ZO1GOSIT
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