【PSMN1R730YL115 Transistors - FETs, MOSFETs - Single Nexperia USA Inc.】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Nexperia USA Inc.






Cut Tape (CT)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

77.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5057pF @ 12V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

109W (Tc)

Rds On (Max) @ Id, Vgs:

1.7 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

1 - 5 of 5 Record(s)
 Part NumberBrandD/CQtyCompany


Nexperia USA Inc.18000MY Group (Asia) Limited    13


NXP1000E-Power Market Co.,Ltd   10


NXP1632+1500Shenzhen Realmilan Electronics Co.,Ltd   1


NXP45000Daejon Electronics  7


NXP18+200000C&G Electronics (HK) Co., Ltd   2

Related Part Number

PSMN1R8-40YLC,115 | PSMN1R940PLQ | PSMN1R5-40ES,127 | PSMN1R6-30BL,118 | PSMN1R8-40YLC,115 | PSMN1R940PLQ | PSMN2R0-30PL,127 | PSMN2R0-30YL,115 | PSMN2R0-60PS,127 | PSMN2R225YLC115 | PSMN2R2-30YLC,115
PSMN1R730YL115 Ref.:

PSMN1R730YL115 Related Keywords in 2018 USA

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