【PSMN1R730YL115 Transistors - FETs, MOSFETs - Single Nexperia USA Inc.】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

PSMN1R730YL115

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Nexperia USA Inc.

Description:

MOSFET N-CH 30V 100A LFPAK

Series:

-

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

77.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5057pF @ 12V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

109W (Tc)

Rds On (Max) @ Id, Vgs:

1.7 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

1 - 5 of 5 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany

PSMN1R8-40YLC

NXP18+12000C&G Electronics (HK) Co., Ltd   2

PSMN1R730YL115
 Part NumberBrandD/CQtyCompany

PSMN1R7-30YL,115

Nexperia USA Inc.18000MY Group (Asia) Limited   14

PSMN1R7-30YL,115

Nexperia18+20000HONG KONG LION ELECTRONIC LIMITED   1

PSMN1R0-25YLDX

3648United Sources Industrial Enterprises Limited   18
STRCWarranty

PSMN1R3-30YL
 

NXP11+1250HK TWO L ELECTRONIC LIMITED    7

Related Part Number

PSMN1R8-30PL,127 | PSMN1R8-40YLC,115 | PSMN1R2-30YLDX | PSMN1R3-30YL,115 | PSMN1R5-30YL,115 | PSMN1R5-30YLC,115 | PSMN1R5-40ES,127 | PSMN1R6-30BL,118 | PSMN1R6-30PL,127 | PSMN1R8-30PL,127 | PSMN1R8-40YLC,115
PSMN1R730YL115 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOIIG]
[HGReferer_SD_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

PSMN1R730YL115 Related Keywords in 2019 USA

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