【PTFA081501E Transistors - FETs, MOSFETs - RF INFINEON】【EMVA630ADA470MHA0G】【2SB233】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

PTFA081501E

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - RF

Brand:

Infineon Technologies

Description:

FET RF 65V 900MHZ H-30248-2

Series:

GOLDMOS

Packaging:

Tray

Transistor Type:

LDMOS

Frequency:

900MHz

Gain:

18dB

Voltage - Test:

28V

Current Rating:

10µA

Noise Figure:

-

Current - Test:

950mA

Power - Output:

150W

Voltage - Rated:

65V

Package / Case:

2-Flatpack, Fin Leads, Flanged

Supplier Device Package:

H-30248-2

PTFA081501E Description

Datasheet PTFA081501E -150W Infineon. BLF6G10-160. Base Station. PTFA081501F- 150W Infineon. BLF6G10-160. Base Station. PTFA091201E-120W Infineon.
1 - 12 of 12 Record(s)
PTFA081501E, EMVA630ADA470MHA0G, 2SB233
 Part NumberBrandD/CQtyCompany

PTFA081501E

INFINEON10+30Hongkong Intercell Electronics Co.,Limited    7

PTFA081501E
 

INFINEON2010500Gaokeda Technology (HK) Limited    10

PTFA081501E V1

Infineon Technologies2016+8000MY Group (Asia) Limited    13

PTFA081501E

INFINEON9960Ouerte Technology (HK)Limited   7

PTFA081501E V1

Infineon05+550Dopoint Hi-Tech Limited    13

EMVA630ADA470MHA0G

Nippon2015+84000Bonase Electronics (HK) Co., Limited    12

EMVA630ADA470MHA0G

United Chemi-Con83400AIC Semiconductor Co., Limited    4

EMVA630ADA470MHA0G

chemi-con2016+23800MY Group (Asia) Limited    13

EMVA630ADA470MHA0G
 

NIPPON1484Nosin (HK) Electronics Co.    12

EMVA630ADA470MHA0G

5614Chip 1 Exchange USA, Inc.    1

2SB233

MAT4200EM Electronic International Limited   12

2SB233

2000Novelty Electronics Limited   9

Related Part Number

EMVA630ADA470MHA0G | 2SB233 | PTF8050A | PTF88F | PTF8N60 | PTFA0430002EV1XWSAI | PTFA043002E | PTFA072401FLV5 | PTFA080551E | PTFA082201E | PTFA082201E/1
PTFA081501E Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIZE]
[HGReferer_SD_Ecatalog]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

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