RF3809 Datasheet 1 of 11. Optimum Technology Matching Applied. GaAs HBT. InGaP HBT. GaAs MESFET. SiGe BiCMOS. Si BiCMOS. SiGe HBT. GaAs pHEMT. Si CMOS. Jun 6, 2010 Pass. Biased Temperature. Cycling. JESD22-A105. Condition B, -40 to 125 C. 74 x 1 lot, QBS to RF3809 pass. Temperature Humidity with Bias. RFPA3809010A. RF MICRO DEVICES , RFMD , Optimum Technology Matching , Enabling Wireless Connectivity , PowerStar , POLARIS TOTAL amplifiers with similar gain and IP3 characteristics in the 2.3GHz to 2.4GHz band: the RF3809 (10.6dB gain, 42.7dBm IP3) and the SZP-2026(Z) (12.6dBm gain,, EP4SE530F43C3ES IC FPGA 1120 I/O 1760FBGA Number of LABs/CLBs: 21248 Number of Logic Elements/Cells: 531200 Total RAM Bits: 28033024 Number of I/O: 1120 Number of Gates: - Voltage - Supply: 0.87 V ~ 0.93 V Mounting Type: Surface Mount Operating Temperature: 0～C ~ 85～C Package / Case: 1760-BBGA, FCBGA Supplier Device Package: 1760-FCBGA (42.5x42.5)
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