Part Number: | RN1112ACT |
Product Name: | RN1112ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1112ACT |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.1W CST3 |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 22k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | - |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
RN1112ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1112ACT TOSHIBA/
TOSHIBA/
99000
USD 0
RN1112ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1112ACT(TPL3) TOSHIBA 22+
TOSHIBA
22+
225800
USD 0
RN1112ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1112ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1112ACT TOSHIBA/
TOSHIBA/
99000
USD 0
RN1112ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1112ACT(TPL3) TOSHIBA 22+
TOSHIBA
22+
225800
USD 0
RN1112ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0