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【SG7818AIG/883B MICROSEMI】【FDME1024NZT】【MLF2012DR15JT】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA

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 Part NumberBrandD/CQtyCompany
SG7818AIG/883BMICROSEMI13+12Foston Technology Co., Limited  2

SG7818AIG/883B, FDME1024NZT, MLF2012DR15JT
 Part NumberBrandD/CQtyCompany
SG7818AIG/883BIR2008+296Bonase Electronics (HK) Co., Limited    10
SG7818AIG/883B100Hongkong Shengshi Electronics Limited   2
SG7818AIG/883B2012500Gold Gain Electronics Limited  1
FSC15420Nosin (HK) Electronics Co.    11
FDME1024NZTFairchild4788Hong Kong In Fortune Electronics Co., Limited    11
FDME1024NZTFSC2015+3000Bonase Electronics (HK) Co., Limited    10
FDME1024NZTFAIRCHILD5000FantastIC Sourcing   12
FDME1024NZTFSC12+30000Sunton Electronics Co., Limited    11
MLF2012DR15JTTDK400000Yesco Electronic Co.,Ltd  1
MLF2012DR15JTTDK201152000Gold Gain Electronics Limited  1
TDK20004000Pacific Corporation   15
TDK16+500000Yingxinyuan INT'L (Group) Limited    13
MLF2012A1R0KT000TDK02+7000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    13

FDME1024NZT Description

MOSFET 2N-CH 20V 3.8A 6-MICROFET Series: PowerTrench? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.8A Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 300pF @ 10V Power - Max: 600mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)

Related Part Number

SG7815AIG/883B | SG7815AR | SG7815AR/883B | SG7815AT883B | SG7815CT | SG7815KC | SG7815T/883B | SG7912AR | SG7912AR/883B

SG7818AIG/883B Related Keywords in 2016 USA

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SG7818AIG/883B Ref.: [hkinbatch20160715] [HGReferer_STC_Overview]
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