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【SG7818AIG/883B MICROSEMI】【FDME1024NZT】【MLF2012DR15JT】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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Foston Technology Co., Limited, Bonase Electronics (HK) Co., Limited ...
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Part NumberPart Number BrandD/CQtyCountry /
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SG7818AIG/883B

SG7818AIG/883B MICROSEMI13+12China
Foston Technology Co., Limited3

SG7818AIG/883B

SG7818AIG/883B IR2008+296China
Bonase Electronics (HK) Co., Limited  11

SG7818AIG/883B

SG7818AIG/883B MICROSE50000China
Hongkong Shengshi Electronics Limited 3

SG7818K/883B

SG7818K/883B LINFINITY0328+81Hong Kong
Hongkong Rixin International Trading Company  1

SG7818K/883B

SG7818K/883B LINFINITY12+287Hong Kong
Asia Components Co.,Limited  10

FDME1024NZT

FDME1024NZT FSC15420China
Nosin (HK) Electronics Co.  12

FDME1024NZT

FDME1024NZT FAIRCHILD10China
CHIPMALL ELECTRONICS LIMITED  2

FDME1024NZT

FDME1024NZT FSC2016+20000China
Far East Electronics Technology Limited  11

FDME1024NZT

FDME1024NZT FAIRCHILD14+10268Hong Kong
Hongkong Rixin International Trading Company  1

FDME1024NZT

FDME1024NZT Fairchild/ON Semiconductor2016+15000China
MY Group (Asia) Limited  12

MLF2012DR15JT

MLF2012DR15JT TDK13728Hong Kong
HongKong Wanghua Technology Limited 3

MLF2012DR15JT

MLF2012DR15JT TDK15+100000China
Felcosion (HK) Network Co., Limited 2

MLF2012DR15JT

MLF2012DR15JT TDK400000China
Yesco Electronic Co.,Ltd 1

MLF2012A2R2KT000

MLF2012A2R2KT000 TDK20004000Japan
Pacific Corporation  16

MLF2012A2R7K

MLF2012A2R7K TDK1827USA
MICRORAM ELECTRONICS INC. 1

Buy: SG7818AIG/883B, FDME1024NZT, MLF2012DR15JT
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SG7818AIG/883B DATASHEET MIL-STD- 883 , paragraph 1.2.1 compliant devices (/ 883B ). Class S wafer processing, . SG7818AIG 5962-8991501UA. SG7818AT. 5962-8991501XA., FDME1024NZT MOSFET 2N-CH 20V 3.8A 6-MICROFET Series: PowerTrench? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.8A Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 300pF @ 10V Power - Max: 600mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)

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