【SI1016XT1E3 Transistors - FETs, MOSFETs - Arrays VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI1016XT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET N/P-CH 20V SOT563F

Series:

TrenchFET

Packaging:

Digi-Reel

FET Type:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

485mA, 370mA

Rds On (Max) @ Id, Vgs:

700 mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.75nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

250mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SC-89-6

1 - 5 of 5 Record(s)
SI1016XT1E3
 Part NumberBrandD/CQtyCompany
WarrantyNewAndOriginal

SI1016X-T1-E3

VISHAY13+2043CHIPMALL ELECTRONICS LIMITED    4

SI1016X-T1-E3

1516+5675Hong Kong In Fortune Electronics Co., Limited    13

SI1016X-T1-E3

VISHAY16+45018Ande Electronics Co., Limited    12

SI1016X-T1-E3
 

VISHAY13+53400TY International components Limited    8
STRCWarranty

SI1016X-T1-E3
 

Vishay1245Nosin (HK) Electronics Co.    13

Related Part Number

SI1016X-T1-GE3 | SI1023CX-T1-GE3 | SH8M41TB1 | SH8M70TB1 | SI1016CX-T1-GE3 | SI1016X-T1-GE3 | SI1023CX-T1-GE3 | SI1023X-T1-E3 | SI1023X-T1-GE3 | SI1024X-T1-E3 | SI1024X-T1-GE3
SI1016XT1E3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOPZE]
[HGReferer_SiteMap]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI1016XT1E3 Related Keywords in 2018 USA

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