【SI2301BDS-T1-E3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Vishay Siliconix


MOSFET P-CH 20V 2.2A SOT23-3




Tape & Reel (TR)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Vgs(th) (Max) @ Id:

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

375pF @ 6V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

700mW (Ta)

Rds On (Max) @ Id, Vgs:

100 mOhm @ 2.8A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

SI2301BDS-T1-E3 Description

MOSFET P-CH 20V 2.2A SOT23-3 Series: TrenchFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: TO-236-3, SC-59, SOT-23-3 Connector Type: SOT-23-3 (TO-236) Function: Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit: Direction: Inputs - Side 1/Side 2:
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Related Part Number

SI2301BDS-T1-GE3 | SI1471DH-T1-E3 | SI1471DH-T1-E3 | SI1472DH-T1-E3 | SI1473DH-T1-E3 | SI1480DH-T1-GE3 | SI1488DH-T1-E3 | SI1499DH-T1-E3 | SI1499DH-T1-GE3 | SI2300DS-T1-GE3 | SI2301BDS-T1-GE3
SI2301BDS-T1-E3 Ref.:

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