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【SI2301BDST1E3 Transistors - FETs, MOSFETs - Single VISHAY】【MAX3317ECUPT】【86S10】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI2301BDST1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 2.2A SOT23-3

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Vgs(th) (Max) @ Id:

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

375pF @ 6V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

700mW (Ta)

Rds On (Max) @ Id, Vgs:

100 mOhm @ 2.8A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Search For SI2301BDST1E3 - SI2301BDST1E3 Product Information : 

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1 - 10 of 10 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI2301BDS-T1-E3

SI2301BDS-T1-E3 VISHAY08+10000China
Foston Technology Co., Limited4
Warranty

Si2301BDS-T1-E3

Si2301BDS-T1-E3 VISHAY13+15000China
CHIPMALL ELECTRONICS LIMITED  3
STRC

Si2301BDS-T1-E3

Si2301BDS-T1-E3 VISHAY28750Hong Kong
C & I Semiconductors Co., Limited  8
STRCWarranty

SI2301BDS-T1-E3

SI2301BDS-T1-E3 VISHAY16+83000Taiwan
Yingxinyuan INT'L (Group) Limited  15

SI2301BDS-T1-E3

SI2301BDS-T1-E3 VISHAY2012+3000China
G Trader Limited 8

MAX3317ECUPT

MAX3317ECUPT Maxim Integrated4301Hong Kong
SSF Group (Asia) Limited  11
Warranty

MAX3317ECUPT

MAX3317ECUPT Maxim15+5015China
XINHUA WEIYE (INT'L) CO., LIMITED  2

MAX3317ECUPT

MAX3317ECUPT 17+2500China
Baluoke (HK) Co.,Limited1

MAX3317ECUPT

MAX3317ECUPT MAXAM20171Hong Kong
LETRADE LIMITED1
Warranty

MAX3313ECUB

MAX3313ECUB MAXIM16+105000Taiwan
Yingxinyuan INT'L (Group) Limited  15

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