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【SI2312BDST1GE3 Transistors - FETs, MOSFETs - Single ChipMall】【IDT74FST3257QS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI2312BDST1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 3.9A SOT23-3

Series:

TrenchFET

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Vgs(th) (Max) @ Id:

850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

750mW (Ta)

Rds On (Max) @ Id, Vgs:

31 mOhm @ 5A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Search For SI2312BDST1GE3 - SI2312BDST1GE3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company
WarrantyNewAndOriginal

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 ChipMall14+40000China
CHIPMALL ELECTRONICS LIMITED  3
STRC

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 VISHAY15600Hong Kong
C & I Semiconductors Co., Limited  8

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 15089China
Hong Kong In Fortune Electronics Co., Limited  13
Warranty

Si2312BDS-T1-GE3

Si2312BDS-T1-GE3 3310USA
Chip 1 Exchange USA, Inc.  1
STRC

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 VISHAY1523+300China
Top Electronics Co.,  12
STRC

IDT74FST3257QS

IDT74FST3257QS IDT99+5000China
Acon Electronics Limited 12
Warranty

IDT74FST3257QS

IDT74FST3257QS IDT99+292China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15
Warranty

IDT74FST3257QS

IDT74FST3257QS IDT99+146China
Yangcheng Electronics Int'l Limited 13
WarrantyNewAndOriginal

IDT74FCT162374CTPV8G

IDT74FCT162374CTPV8G IDT662Hong Kong
OEMs Inventory1

IDT74FCT157CTSO

IDT74FCT157CTSO IDT19976613Japan
Pacific Corporation  17

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