Part Number: | SI2329DST1GE3 |
Product Name: | SI2329DST1GE3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | SI2329DST1GE3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET P-CH 8V 6A SOT-23 |
Series: | TrenchFET |
Packaging: | |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1485pF @ 4V |
Vgs (Max): | ±5V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Tc) |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.3A, 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : SI2329DS-T1-GE3
Brand : VISHAY
Date Code : 23+
Qty : 5000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI2329DS-T1-GE3
Brand : SGMICRO
Date Code :
Qty : 6
USD 0
Part NO. : SI2329DS-T1-GE3
Brand : VISHAY
Date Code : 2021+
Qty : 9500
USD 0
Part NO. : SI2329DS-T1-GE3
Brand : SGMICRO
Date Code :
Qty : 6
USD 0
Part NO. : SI2329DS-T1-GE3
Brand : VISHAY
Date Code : 2021+
Qty : 9500
USD 0