【SI2336DS-T1-GE3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI2336DS-T1-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 5.2A SOT-23

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

560pF @ 15V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta), 1.8W (Tc)

Rds On (Max) @ Id, Vgs:

42 mOhm @ 3.8A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

1 - 5 of 5 Record(s)
SI2336DST1GE3
 Part NumberBrandD/CQtyCompany
STRCWarranty

SI2336DS-T1-GE3
 

VISHAY16+83000Yingxinyuan INT'L (Group) Limited    15

SI2336DS-T1-GE3

VISHAY2016+3100Ande Electronics Co., Limited    12

SI2336DS-T1-GE3
 

VISHAY13+9500TY International components Limited    8

SI2336DS-T1-GE3

Vishay Semiconductors26414HongKong Wanghua Technology Limited   4
STRC

SI2336DS-T1-GE3
 

VISHAY9500C & I Semiconductors Co., Limited    8

Related Part Number

SI2337DS-T1-E3 | SI2329DS-T1-GE3 | SI2329DS-T1-GE3 | SI2331DS-T1-E3 | SI2333CDS-T1-E3 | SI2333CDS-T1-GE3 | SI2333DDS-T1-GE3 | SI2333DS-T1-E3 | SI2333DS-T1-GE3 | SI2335DS-T1-E3 | SI2337DS-T1-E3
SI2336DS-T1-GE3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBIOIB]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI2336DS-T1-GE3 Related Keywords in 2018 USA

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