| Part Number: | SI3127DVT1GE3 |
| Product Name: | SI3127DVT1GE3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | SI3127DVT1GE3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Vishay Siliconix |
| Description: | MOSFET P-CHAN 60V TSOP6S |
| Series: | TrenchFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta), 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 833pF @ 20V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 2W (Ta), 4.2W (Tc) |
| Rds On (Max) @ Id, Vgs: | 89 mOhm @ 1.5A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : Si3127DV-T1-GE3
Brand : Vishay
Date Code : 22+
Qty : 55200
Unit Price :
(USD)
USD
0
Part NO. : SI3127DV-T1-GE3
Brand : LVM
Date Code : 22
Qty : 51000
Unit Price :
(USD)
USD
0
Part NO. : SI3127DV-T1-GE3
Brand : LVM
Date Code : 21
Qty : 105000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : SI3127DV-T1-GE3
Brand : VISHAY
Date Code :
Qty : 19699
USD 0
Part NO. : SI3127DV-T1-GE3
Brand : VISHAY
Date Code :
Qty : 29100
USD 0
Part NO. : SI3127DV-T1-GE3
Brand : VISHAY
Date Code :
Qty : 19699
USD 0
Part NO. : SI3127DV-T1-GE3
Brand : VISHAY
Date Code :
Qty : 29100
USD 0
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