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【SI3407DVT1GE3 VHY】【FES16AT】【GJM0332C1E3R6WB01D】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA

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SI3407DVT1GE3, FES16AT, GJM0332C1E3R6WB01D
 Part NumberBrandD/CQtyCompany
SI3407DV-T1-GE3VHY2000United Sources Industrial Enterprises   16
VISHAY12+60000Sino Star Electronics (HK) Co.,Limited   10
SI3407DV-T1-GE3Vishay Semiconductors17874HongKong Wanghua Technology Limited   2
Si3407DV-T1-GE3VISHAY3000Acon Electronics Limited    10
FES16ATFAIRCHILD13+13800A & C Int'l Electronics Co.    9
FES16ATGENERAL INSTRUMENT6300Riking Technology (HK) Co., Limited   7
FES16ATFAIRCHILD4099Shenzhen HYC Electronic&Technology Co.,Ltd   8
FES16ATRFAIRCHILD13+13800A & C Int'l Electronics Co.    9
GJM0332C1E3R6WB01DMURATA2011250000Gold Gain Electronics Limited  1
GJM0335C1E1R0BB01DMURATA72886Sdiamond Electronics Co.,Ltd   12
GJM0335C1E5R6BB01D100Val Technologies, Inc   13
GJM0335C0J220JB01DMURATA30000Corich International Ltd.   12
GJM0335C0J220JB01D29500PartsTech (HK) Co., Ltd.   13

FES16AT Description

DIODE GEN PURP 50V 16A TO220AC Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65~C ~ 150~C

Related Part Number

SI3241GQ | SI3242P | SI32911AFS | SI32919 | SI3317H | SI3402 | SI3402AGM | SI3402AGMR | SI3402GM

SI3407DVT1GE3 Related Keywords in 2016 USA

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SI3407DVT1GE3 USA, Fiche Technique FES16AT GJM0332C1E3R6WB01DSI3407DVT1GE3 цена FES16AT GJM0332C1E3R6WB01DSI3407DVT1GE3 가격, 브로커, 유통업체 & 중개인 FES16AT GJM0332C1E3R6WB01D
SI3407DVT1GE3 Ref.: [hkinbatch20160715] [HGReferer_SD_Ecatalog]
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