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【SI3460DDVT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【IFFP064V】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI3460DDVT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 7.9A 6-TSOP

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

7.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

666pF @ 10V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

1.7W (Ta), 2.7W (Tc)

Rds On (Max) @ Id, Vgs:

28 mOhm @ 5.1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

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Si3460DDV-T1-GE3

Si3460DDV-T1-GE3 VISHAY6350Hong Kong
C & I Semiconductors Co., Limited  8
Warranty

SI3460DDV-T1-GE3

SI3460DDV-T1-GE3 VISHAY10+/200China
CHIPMALL ELECTRONICS LIMITED  3

SI3460DDV-T1-GE3

SI3460DDV-T1-GE3 Vishay Semiconductors28153Hong Kong
HongKong Wanghua Technology Limited 4
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Si3460DDV-T1-GE3

Si3460DDV-T1-GE3 FUTURE10097USA
Chip 1 Exchange USA, Inc.  1
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SI3460DDV-T1-GE3

SI3460DDV-T1-GE3 VISHAY50440China
Belt (HK) Electronics Co  12

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IFFP064V | CL21B122KBANNNB | SI3459DVT1E3 | SI3460BDVT1E3 | 6417751 | SI3460BDVT1GE3 | CL21B122KBANNNC | 6419371 | CL21B123JBANNNC | SI3460DDVT1E3
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