【SI3475DV-T1-GE3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

SI3475DV-T1-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 200V 0.95A 6-TSOP

Series:

TrenchFET

Packaging:

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

950mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

500pF @ 50V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 3.2W (Tc)

Rds On (Max) @ Id, Vgs:

1.61 Ohm @ 900mA, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

1 - 5 of 5 Record(s)
SI3475DVT1GE3
 Part NumberBrandD/CQtyCompany
Warranty

SI3475DV-T1-GE3

VISHAY19092CIS Ltd (CHECK IC SOLUTION LIMITED)    1

SI3475DV-T1-GE3

VISHAY3200ATP ELECTRONIC TECHNOLOGY CO., LIMITED    3

SI3475DV-T1-GE3

VISHAY2015+3938Bonase Electronics (HK) Co., Limited    13

SI3475DV-T1-GE3

Vishay Siliconix1000MY Group (Asia) Limited   14

SI3475DV-T1-GE3

VISHAY126000Worldsequence Co.,Ltd    10

Related Part Number

SI3477DV-T1-GE3 | SI3481DV-T1-E3 | SI3474DV-T1-GE3 | SI3475DV-T1-E3 | SI3477DV-T1-GE3 | SI3481DV-T1-E3 | SI3483CDV-T1-E3 | SI3483CDV-T1-GE3 | SI3483DV-T1-E3 | SI3483DV-T1-GE3 | SI3493BDV-T1-E3
SI3475DV-T1-GE3 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOZIB]
[HGReferer_AboutUs]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI3475DV-T1-GE3 Related Keywords in 2019 USA

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