【SI3812DVT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【C1812C333MCRACTU】【SFT10801】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI3812DVT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 2A 6-TSOP

Series:

LITTLE FOOT

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

830mW (Ta)

Rds On (Max) @ Id, Vgs:

125 mOhm @ 2.4A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

SI3812DVT1GE3 Description

Si3812DV. Document Number: 71069. S11-0651-Rev. G, 11-Apr-11 www.vishay. com. 1. This document is subject to change without notice. Ordering Information: Si3812DV - T1 - GE3 (Lead (Pb)-free and Halogen-free). K. A. D. G. S. 0.36. 1.8. 2.4. 1.15. Si3812DV . N. Single Plus. Integrated. Schottky. 20. 20. 0.125. 0.2. 2.4. 2.1. 1.15. ChipFET 1206-8. Si5855DC. P. Single Plus. Integrated. Schottky. -20. 20. 0.11. 0.16. 0.24. 3.6. 5.1. 2.1. LITTLE FOOT Plus Schottky, continued VDS = 20 V. TSOP-6. Si3812DV . Single N-Channel MOSFET with integrated Schottky;. VDS = 20 V; ID = 2.4 A. rDS(on) = 125 milliohms. SMD. TSOP-6. Si3851DV. Single P-Channel MOSFET with integrated Schottky;. VDS = -30 V; ID = -1.8 A.
1 - 11 of 11 Record(s)
SI3812DVT1GE3, C1812C333MCRACTU, SFT10801
 Part NumberBrandD/CQtyCompany

SI3812DV-T1-GE3

VISHAY2015+12000Bonase Electronics (HK) Co., Limited    12

SI3812DV-T1-GE3

Vishay Siliconix2016+1000MY Group (Asia) Limited    13

SI3812DV-T1-GE3

12+9500NST SEMICONDUCTOR LIMITED    12

SI3812DV-T1-GE3

Vishay13+1900Dopoint Hi-Tech Limited    13

SI3812DV-T1-GE3

Vishay13+8608Raref Electronics System Limited   2

C1812C333MCRACTU

Kemet47263SUNTOP SEMICONDUCTOR CO., LIMITED    3

C1812C333MCRACTU

Kemet26415HongKong Wanghua Technology Limited   3

C1812C333MCRACTU

KEMET36800ONSTAR ELECTRONICS CO., LIMITED    2

C1812C105M1RAC

KEMET1410+1000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    15

C1812C104K2RACTU

3000Kwong Shun Electronics (HK)Co.   13

SF-T10-80-1

TDK10+500000C & I Semiconductors Co., Limited   8

Related Part Number

C1812C333MCRACTU | SFT10801 | SI3590DVT1E3 | SI35K10AN7 | SI3801DV | SI3850ADVT1E3 | SI3861BDVT1 | SI3861BDVT1E3 | SI3861BDVT1GE3 | SI3865BDV | SI3865BDVT1
SI3812DVT1GE3 Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIIB]
[HGReferer_SD_Ecatalog]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

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