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【SI3812DVT1GE3 V】【C1812C333MCRACTU】【SFT10801】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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SI3812DVT1GE3 Si3812DV. Document Number: 71069. S11-0651-Rev. G, 11-Apr-11 www.vishay. com. 1. This document is subject to change without notice. Ordering Information: Si3812DV - T1 - GE3 (Lead (Pb)-free and Halogen-free). K. A. D. G. S. 0.36. 1.8. 2.4. 1.15. Si3812DV . N. Single Plus. Integrated. Schottky. 20. 20. 0.125. 0.2. 2.4. 2.1. 1.15. ChipFET 1206-8. Si5855DC. P. Single Plus. Integrated. Schottky. -20. 20. 0.11. 0.16. 0.24. 3.6. 5.1. 2.1. LITTLE FOOT Plus Schottky, continued VDS = 20 V. TSOP-6. Si3812DV . Single N-Channel MOSFET with integrated Schottky;. VDS = 20 V; ID = 2.4 A. rDS(on) = 125 milliohms. SMD. TSOP-6. Si3851DV. Single P-Channel MOSFET with integrated Schottky;. VDS = -30 V; ID = -1.8 A. ...
1 - 11 of 11 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /


SI3812DV-T1-GE3 V14+24942China
Taiwan Anprosperous Technology Co.,Limited  11


SI3812DV-T1-GE3 Vishay13+8608China
Raref Electronics System Limited 2


SI3812DV-T1-GE3 VISHAY2015+12000China
Bonase Electronics (HK) Co., Limited  11


SI3812DV-T1-GE3 13+1046China


SI3812DV-T1-E3 VISHAY16+83000Taiwan
Yingxinyuan INT'L (Group) Limited  14


C1812C333MCRACTU Kemet47263Hong Kong


C1812C333MCRACTU Kemet26415Hong Kong
HongKong Wanghua Technology Limited 3


C1812C333MCRACTU KEMET36800Hong Kong


C1812C105M1RAC KEMET1410+1000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14


C1812C104K2RACTU 3000China
Kwong Shun Electronics (HK)Co. 13


SF-T10-80-1 TDK10+500000Hong Kong
C & I Semiconductors Co., Limited 7

Buy: SI3812DVT1GE3, C1812C333MCRACTU, SFT10801
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C1812C333MCRACTU | SFT10801 | SI3474DV | SI3522V | SI3560M | SI3801DV | SI3861BDVT1GE3 | SI4010C2 | SI4133 | SI4166 | SI4335DYT1REVA

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