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【SI3812DVT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【C1812C333MCRACTU】【SFT10801】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI3812DVT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 2A 6-TSOP

Series:

LITTLE FOOT

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

830mW (Ta)

Rds On (Max) @ Id, Vgs:

125 mOhm @ 2.4A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Search For SI3812DVT1GE3 - SI3812DVT1GE3 Product Information : 

SI3812DVT1GE3 Si3812DV. Document Number: 71069. S11-0651-Rev. G, 11-Apr-11 www.vishay. com. 1. This document is subject to change without notice. Ordering Information: Si3812DV - T1 - GE3 (Lead (Pb)-free and Halogen-free). K. A. D. G. S. 0.36. 1.8. 2.4. 1.15. Si3812DV . N. Single Plus. Integrated. Schottky. 20. 20. 0.125. 0.2. 2.4. 2.1. 1.15. ChipFET 1206-8. Si5855DC. P. Single Plus. Integrated. Schottky. -20. 20. 0.11. 0.16. 0.24. 3.6. 5.1. 2.1. LITTLE FOOT Plus Schottky, continued VDS = 20 V. TSOP-6. Si3812DV . Single N-Channel MOSFET with integrated Schottky;. VDS = 20 V; ID = 2.4 A. rDS(on) = 125 milliohms. SMD. TSOP-6. Si3851DV. Single P-Channel MOSFET with integrated Schottky;. VDS = -30 V; ID = -1.8 A. ...
1 - 11 of 11 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI3812DV-T1-GE3

SI3812DV-T1-GE3 VISHAY2015+12000China
Bonase Electronics (HK) Co., Limited  12

SI3812DV-T1-GE3

SI3812DV-T1-GE3 Vishay Siliconix2016+1000China
MY Group (Asia) Limited  13

SI3812DV-T1-GE3

SI3812DV-T1-GE3 12+9500China
NST SEMICONDUCTOR LIMITED  12

SI3812DV-T1-GE3

SI3812DV-T1-GE3 Vishay13+1900China
Dopoint Hi-Tech Limited  13

SI3812DV-T1-GE3

SI3812DV-T1-GE3 Vishay13+8608China
Raref Electronics System Limited 3

C1812C333MCRACTU

C1812C333MCRACTU Kemet47263Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3
Warranty

C1812C333MCRACTU

C1812C333MCRACTU KEMET36800Hong Kong
ONSTAR ELECTRONICS CO., LIMITED  2

C1812C103J1GAC

C1812C103J1GAC 100USA
Val Technologies, Inc 15
Warranty

C1812C222JDRAC7800

C1812C222JDRAC7800 KEMET11+3256China
HK TWO L ELECTRONIC LIMITED  7

C1812C154K5RAC7800

C1812C154K5RAC7800 KEMET11+1800China
C&G Electronics (HK) Co., Ltd 1
Warranty

SF-T10-80-1

SF-T10-80-1 TDK10+500000Hong Kong
C & I Semiconductors Co., Limited 8

Buy: SI3812DVT1GE3, C1812C333MCRACTU, SFT10801
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C1812C333MCRACTU | SFT10801 | SI3590DVT1E3 | SI35K10AN7 | SI3801DV | SI3850ADVT1E3 | SI3861BDVT1 | SI3861BDVT1E3 | SI3861BDVT1GE3 | SI3865BDV | SI3865BDVT1
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