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【SI3812DVT1GE3 VISHAY】【C1812C333MCRACTU】【SFT10801】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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YLH Electronics (H.K.) Co.,Limited, Taiwan Anprosperous Technology Co.,Limited ...
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SI3812DV-T1-GE3

SI3812DV-T1-GE3 VISHAY201663000China
YLH Electronics (H.K.) Co.,Limited  12

SI3812DV-T1-GE3

SI3812DV-T1-GE3 V14+24942China
Taiwan Anprosperous Technology Co.,Limited  11

SI3812DV-T1-GE3

SI3812DV-T1-GE3 VISHAY2015+12000China
Bonase Electronics (HK) Co., Limited  11

SI3812DV-T1-GE3

SI3812DV-T1-GE3 Vishay Siliconix2016+18000China
MY Group (Asia) Limited  12

SI3812DV-T1-GE3

SI3812DV-T1-GE3 13+1046China
NST SEMICONDUCTOR LIMITED  11

C1812C333MCRACTU

C1812C333MCRACTU Kemet47263Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  2

C1812C333MCRACTU

C1812C333MCRACTU Kemet26415Hong Kong
HongKong Wanghua Technology Limited 3

C1812C333MCRACTU

C1812C333MCRACTU KEMET36800Hong Kong
ONSTAR ELECTRONICS CO., LIMITED  2

C1812C334Z5UAC7250

C1812C334Z5UAC7250 KEMET5895Italy
Ramos S.R.L. 12

C1812C103F5GAC7800

C1812C103F5GAC7800 1585USA
MICRORAM ELECTRONICS INC. 1

SF-T10-80-1

SF-T10-80-1 TDK10+500000Hong Kong
C & I Semiconductors Co., Limited 7

Buy: SI3812DVT1GE3, C1812C333MCRACTU, SFT10801
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C1812C333MCRACTU | SFT10801 | SI3474DV | SI3522V | SI3560M | SI3801DV | SI3861BDVT1GE3 | SI4010C2 | SI4133 | SI4166 | SI4335DYT1REVA
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SI3812DVT1GE3 Si3812DV. Document Number: 71069. S11-0651-Rev. G, 11-Apr-11 www.vishay. com. 1. This document is subject to change without notice. Ordering Information: Si3812DV - T1 - GE3 (Lead (Pb)-free and Halogen-free). K. A. D. G. S. 0.36. 1.8. 2.4. 1.15. Si3812DV . N. Single Plus. Integrated. Schottky. 20. 20. 0.125. 0.2. 2.4. 2.1. 1.15. ChipFET 1206-8. Si5855DC. P. Single Plus. Integrated. Schottky. -20. 20. 0.11. 0.16. 0.24. 3.6. 5.1. 2.1. LITTLE FOOT Plus Schottky, continued VDS = 20 V. TSOP-6. Si3812DV . Single N-Channel MOSFET with integrated Schottky;. VDS = 20 V; ID = 2.4 A. rDS(on) = 125 milliohms. SMD. TSOP-6. Si3851DV. Single P-Channel MOSFET with integrated Schottky;. VDS = -30 V; ID = -1.8 A.

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