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【SI4156DYT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【MT1389EE/BC2LH】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4156DYT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 24A 8-SOIC

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1700pF @ 15V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 6W (Tc)

Rds On (Max) @ Id, Vgs:

6 mOhm @ 15.7A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Search For SI4156DYT1GE3 - SI4156DYT1GE3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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SI4156DY-T1-GE3

SI4156DY-T1-GE3 VISHAY13+3000China
CHIPMALL ELECTRONICS LIMITED  3

SI4156DY-T1-GE3

SI4156DY-T1-GE3 VISHAY1513+19531China
Sinno Electronics Co., Limited  8

SI4156DY-T1-GE3

SI4156DY-T1-GE3 Vishay15+13147China
TY International components Limited  7

SI4156DY-T1-GE3

SI4156DY-T1-GE3 VISHAY1533+5000China
Acon Electronics Limited 11

SI4156DY-T1-GE3

SI4156DY-T1-GE3 VISHAY2016+850000China
Far East Electronics Technology Limited  12

MT1389EE/BC2-LH

MT1389EE/BC2-LH MTK2016+2000China
Shenzhen Everbell Technology Co.Ltd 12

MT1389DE-PDAL

MT1389DE-PDAL MTK16+100000China
Shenzhen Allchips Information & Technology Co., Ltd  2

MT1389DE

MT1389DE MTK06+233China
Well Rich Trading Group Limited  8

MT1389KQE

MT1389KQE MTK16+30000China
APEX ELECTRONICS CO., LIMITED 3

MT1389QE

MT1389QE MEDIATE16+21689China
ShenZhen BoKe Elec Co.,Ltd1

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